2007-08-09 BFP650F 1 1 2 4 3 npn silicon germanium rf transistor* ? for medium power amplifiers and driver stages ? high oip 3 and p -1db ? ideal for low phase noise oscilators ? maxim. available gain g ma = 21.5 db at 1.8 ghz noise figure f = 0.8 db at 1.8 ghz ? 70 ghz f t - silicon germanium technology ? pb-free (rohs compliant) package 1) ? qualified according aec q101 * short term description 1 3 4 2 direction of unreeling top view xys esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package BFP650F r5s 1=b 2=e 3=c 4=e - - tsfp-4 1 pb-containing package may be available upon special request
2007-08-09 BFP650F 2 maximum ratings parameter symbol value unit collector-emitter voltage t a > 0 c t a 0 c v ceo 4 3.7 v collector-emitter voltage v ces 13 collector-base voltage v cbo 13 emitter-base voltage v ebo 1.2 collector current i c 150 ma base current i b 10 total power dissipation 1) t s 85c p tot 500 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 130 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 3 ma, i b = 0 v (br)ceo 4 4.5 - v collector-emitter cutoff current v ce = 13 v, v be = 0 i ces - - 100 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 10 a dc current gain i c = 80 ma, v ce = 3 v, pulse measured h fe 110 180 270 - 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance
2007-08-09 BFP650F 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 80 ma, v ce = 3 v, f = 1 ghz f t - 42 - ghz collector-base capacitance v cb = 3 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.26 - pf collector emitter capacitance v ce = 3 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.45 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 1.3 - noise figure i c = 10 ma, v ce = 3 v, f = 1.8 ghz, z s = z sopt i c = 10 ma, v ce = 3 v, f = 6 ghz, z s = z sopt f - - 0.8 1.9 - - db power gain, maximum available 1) i c = 80 ma, v ce = 3 v, z s = z sopt, z l = z lopt , f = 1.8 ghz f = 6 ghz g ma - - 21.5 11 - - transducer gain i c = 80 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz f = 6 ghz | s 21e | 2 15 - 17.5 7.5 - - db third order intercept point at output 2) v ce = 3 v, i c = 80 ma, f = 1.8 ghz, z s = z l = 50 ? ip 3 - 31 - dbm 1db compression point at output i c = 80 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz p -1db - 17.5 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ) 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2007-08-09 BFP650F 4 total power dissipation p tot = ? ( t s ) 0 15 30 45 60 75 90 105 120 135 150 0 50 100 150 200 250 300 350 400 450 500 550 t s [c] ptot [mw] collector-base capacitance c cb = ? ( v cb ) f = 1 mhz 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v cb [v] c cb [pf] transition frequency f t = ? ( i c ) v ce = parameter in v, f = 1 ghz 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25 30 35 40 45 i c [ma] f t [ghz] 3.00v 2.00v 1.00v 0.50v power gain g ma , g ms = ? ( f ) v ce = 3 v, i c = 80 ma 0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 40 45 50 f [ghz] g [db] g ms g ma |s 21 | 2
2007-08-09 BFP650F 5 power gain g ma , g ms = ? ( i c ) v ce = 3 v f = parameter in ghz 0 20 40 60 80 100 120 140 160 180 200 6 8 10 12 14 16 18 20 22 24 26 28 30 i c [ma] g [db] 6.00ghz 5.00ghz 4.00ghz 3.00ghz 2.40ghz 1.80ghz 0.90ghz power gain g ma , g ms = ? ( v ce ) i c = 80 ma f = parameter in ghz 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 5 10 15 20 25 30 v ce [v] g [db] 6.00ghz 5.00ghz 4.00ghz 3.00ghz 2.40ghz 1.80ghz 0.90ghz
2007-08-09 BFP650F 6 package tsfp-4 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel bfp420f type code pin 1 0.35 0.45 0.9 0.5 0.5 4 0.2 1.55 0.7 1.4 8 pin 1 0.05 0.2 0.05 1.4 12 10? max. 0.05 0.8 1.2 0.05 0.04 0.55 0.05 0.2 0.05 0.15 0.05 0.2 0.5 0.05 0.5 0.05 43 manufacturer
2007-08-09 BFP650F 7 edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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